2SD334 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD334 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
VCB= 110V; IE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 4V
hFE Classifications
R
O
Y
40-80 70-150 130-260
2SD334
MIN TYP. MAX UNIT
80
V
7
V
2
V
2.5
V
50 μA
1
mA
40
260
SPTECH website：www.superic-tech.com
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