K2078 查看數據表（PDF） - Inchange Semiconductor
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K2078 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
2SK2078
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDSF
Diode Forward Voltage
VDS=10V; ID=1mA
IDR=9A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 4A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
ton
Turn-on Time
tf
Fall Time
toff
Turn-off Time
VGS=10V;
ID=4A;
VDD=400V;
RL=100Ω
MIN TYPE MAX UNIT
800
V
1.5
3.5
V
2.0
V
1.0
1.2
Ω
±100 nA
100
µA
1500
135
pF
210
35
55
ns
25
100
isc website：www.iscsemi.cn
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