2SC2883-O-TP(2011) 查看數據表（PDF） - Micro Commercial Components
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2SC2883-O-TP Datasheet PDF : 4 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$% !"#
2SC2883-O
2SC2883-Y
Features
• Power amplifier applications
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
30
30
5.0
1500
Unit
V
V
V
mA
PC
Collector power dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
500
mW
150
к
-55 to +150
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
V(BR)EBO
Collector-Emitter Breakdown Voltage*
(IE=1mAdc, IC=0)
ICBO
Collector-Base Cutoff Current
(VCB=30Vdc,IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
30 ---
5
---
--- ---
--- ---
---
Vdc
Vdc
0.1 uAdc
0.1 uAdc
hFE
VCE(sat)
VBE
fT
Cob
Forward Current Transfer ratio
(IC=0.5Adc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=1.5Adc, IB=30mAdc)
Base-Emitter Voltage
(IC=0.5Adc, VCE=2.0Vdc)
Transition Frequency
(IC=0.5Adc, VCE=2.0Vdc)
Collector Output Capacitance
(VCB=10V, IE=0, f=1MHz)
100 --- 320
---
--- --- 2.0 Vdc
--- --- 1.0 Vdc
--- 120 --- MHz
--- --- 40
pF
CLASSIFICATION OF HFE
Rank
O
Y
Range
100-200
160-320
Marking
GO
GY
NPN Silicon
Power Transistors
SOT-89
A
B
K
E
C
D
G
H
F
J
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
.061
1.55
25
REF.
Revision: A
www.mccsemi.com
1 of 4
2011/01/01
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