MMBT3906W 查看數據表（PDF） - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

零件编号

产品描述 (功能)

生产厂家

MMBT3906W

PNP Transistor

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

MMBT3906W

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Base cut-off current

Collector- emitter cut-off current

Emitter cut-off current

Collector-emitter saturation voltage (Note.1)

Base - emitter saturation voltage (Note.1)

DC current gain

(Note.1)

Delay time

Rise time

Storage time

Fall time

Collector input capacitance

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE= 0 (Note.1)

VCEO Ic= -1 mA， IB= 0 (Note.1)

VEBO IE= -100μA， IC= 0 (Note.1)

ICBO VCB= -40 V , IE= 0 (Note.1)

IBL VCE= -30 V , VEB(off)= -3V (Note.1)

ICEX VCE= -30 V ,VBE(off)= -3V

IEBO VEB= -5V , IC=0

IC=-10 mA, IB=-1 mA

VCE(sat)

IC=-50 mA, IB=-5 mA

IC=-10 mA, IB=-1 mA

VBE(sat)

IC=-50 mA, IB=-5 mA

hFE(1) VCE= -1V, IC= -100 uA

hFE(2) VCE= -1V, IC= -1 mA

hFE(3) VCE= -1V, IC= -10 mA

td

VCC=-3V, VBE(off)=-0.5V IC=-10mA,

tr

IB1=-1mA

ts

VCC=-3V, IC=-10mA, IB1= IB2=-1mA

tf

Cib VEB= -0.5V, IE= 0,f=1MHz

Cob VCB= -5V, IE= 0,f=1MHz

fT

VCE= -20V, IC= -10mA,f=100MHz

Note.1: Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.

Min Typ Max Unit

-40

-40

V

-5

-100

-50

nA

-50

-100

-0.2

-0.3

V

-0.85

-0.95

60

80

100

300

35

35

nS

225

75

10

pF

4.5

250

MHz

www.yfwdiode.com

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