2SD726 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD726 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPNPower Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High Power Dissipation
·Complement to Type 2SB690
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
8
A
40
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
SPTECH website：www.superic-tech.com
2SD726
1
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