SK10200D 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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SK10200D Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
SK1040D-SK10200D
10.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
C lassification Rating 94V-O
TO-252/DPAK
Mechanical Data
! Case: TO-252/DPAK, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SK
1040D
SK
1045D
SK
1050D
SK SK
1060D 1080D
SK
1080D
SK SK
10100D 10200D
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
40
45
50
60
80 100 150 200
V
VR
RMS Reverse Voltage
VR(RMS)
28
31
35
42
56
70 105 140
V
Average Rectified Output Current @TL = 75°C
(Note 1)
IO
10.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
150
A
(JEDEC Method)
Forward Voltage
@IF = 10A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
0.55
350
0.70
0.85
0.92
V
0.1
20
mA
280
200
pF
Typical Thermal Resistance (Note 1)
RJA
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +125
-55 to +150
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SK1040D-SK10200D
1 of 2
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