2SC3835 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC3835 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= 12V
COB
Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
hFE Classifications
O
Y
G
70-120 100-200 160-220
2SC3835
MIN TYP. MAX UNIT
120
V
0.5
V
1.2
V
100 μA
100 μA
70
220
20
MHz
110
pF
0.5 μs
3.0 μs
0.5 μs
SPTECH website：www.superic-tech.com
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