B754Y 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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产品描述 (功能)

生产厂家

B754Y

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2SB754

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10mA; IC= 0

-5

V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

-50

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A

-0.4

V

VBE(on)

Base-Emitter On Voltage

IC= -4A; VCE= -1V

-1.2

V

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

-10 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10 μA

hFE-1

DC Current Gain

IC= -1A; VCE= -1V

70

240

hFE-2

DC Current Gain

IC= -4A; VCE= -1V

30

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1.0MHz

300

pF

fT

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

10

MHz

 hFE-1Classifications

O

Y

70-140 120-240

SPTECH website：www.superic-tech.com

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