B1017 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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产品描述 (功能)

生产厂家

B1017

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -1.7V(Max)@IC= -3A

·Good Linearity of hFE

·Complement to Type 2SD1408

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 20~25W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IB

Base Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-0.4

A

2

W

25

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SB1017

SPTECH website：www.superic-tech.com

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