SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 90V; IE= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
tf
Fall Time
IC= 5A, IB1= 0.6A
hFE Classifications
R
Q
P
15-35 25-45 35-70
2SC940
MIN TYP. MAX UNIT
1.5
V
2.0 mA
15
70
1.0 μs
SPTECH website:www.superic-tech.com
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