BDW52C 查看數據表（PDF） - New Jersey Semiconductor
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BDW52C Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
BDW52/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25"C unless otherwise specified
SYMBOL
PARAMETER
BDW52
CONDITIONS
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDW52A
BDW52B
BDW52C
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-10A;lB=-2.5A
VaE(sat) Base-Emitter Saturation Voltage
IC=-10A;IB=-2.5A
VBE(on)
ICBO
Base-Emitter On Voltage
BDW52
Collector
Cutoff Current
BDW52A
BDW52B
BDW52C
BDW52
lc= -5A; VCE= -4V
VCB= -45V; IE= 0
VcB=-45V;lE=0;Tc=150°C
VCB= -60V; IE= 0
VcB=-60V;lE=0;Tc=150-C
VCB= -80V; IE= 0
Vce=-80V; l6=0;Tc=150r
VCB=-100V; IE=0
VCB=-100V; IE=0;TC=150°C
VCE= -22V; IB= 0
Collector
ICEO
Cutoff Current
BDW52A
BDW52B
VCE= -30V; IB= 0
VC£= -40V; IB= 0
BDW52C VCE= -50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc=0
hpE-1
DC Current Gain
lc= -5A; VCE= -4V
hpE-2
DC Current Gain
fr
Current Gain-Bandwidth Product
lc=-10A;VCE=-4V
lc= -0.5A; VCE= -4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-1.0
V
-3,0
V
-2.5
V
-1.5
V
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-0.5
-5.0
-1.0 mA
-2.0 mA
20
150
5
3
MHz
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