2SB1396-T 查看數據表（PDF） - KEXIN Industrial

零件编号

产品描述 (功能)

生产厂家

2SB1396-T

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1396

Transistors

■ Features

● Low collector to emitter saturation voltage

● Large current capacity

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

Tstg

Rating

-15

-10

-7

-3

-5

1.3

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

ICBO

Ic= -100 uA， IE=0

Ic= -1 mA, RBE=∞

IE= -100 uA， IC=0

VCB= -12V , IE=0

Emitter cut-off current

IEBO VEB= -6V , IC=0

Collector-emitter saturation voltage

VCE(sat) IC=-1.5 A, IB=-30 mA

Base - emitter saturation voltage

VBE(sat) IC=-1.5 A, IB=-30 mA

DC current gain

VCE= -2V, IC= -500 mA

hFE

VCE= -2V, IC= -3 A

Collector output capacitance

Cob VCB= -10V, IE= 0,f=1MHz

Transition frequency

fT

VCE= -2V, IC= -300 mA

1.Base

2.Collector

3.Emitter

Unit

V

A

W

℃

Min Typ Max Unit

-15

-10

V

-7

-0.1

uA

-0.1

-0.22 -0.4

V

-0.9 -1.2

140

560

70

26

pF

400

MHz

■ Classification of hfe(1)

Type

2SB1396-S

Range

140-280

Marking

BO S*

2SB1396-T

200-400

BO T*

2SB1396-U

280-560

BO U*

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