MJE340 查看數據表（PDF） - Tiger Electronic
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MJE340 Datasheet PDF : 2 Pages
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TIGER ELECTRONIC CO.,LTD
MJE340
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 300 V(Min)
·DC Current Gain-
: hFE = 30(Min) @ IC= 50mA
·Low Collector Saturation Voltage-
: VCE(sat) = 1.0V(Max.)@ IC= 50mA
·Complement to the PNP MJE350
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
0.5
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.25 ℃/W
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