MJE340 查看數據表（PDF） - Tiger Electronic
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MJE340 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1.0mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA
ICBO
Collector Cutoff Current
VCB= 300V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 50m A ; VCE= 10V
MJE340
MIN MAX UNIT
300
V
300
V
3
V
1.0
V
0.1
mA
0.1
mA
30
240
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