MSA-1110 查看數據表（PDF） - Avago Technologies
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MSA-1110 Datasheet PDF : 4 Pages
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MSA-1110 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
90 mA
560 mW
RF Input Power
+13 dBm
Junction Temperature 200°C
Storage Temperature
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.4 mW/°C for TC > 124°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of θjc than do alternate methods.
Thermal Resistance[2, 4]:
θjc = 135°C/W
Electrical Specifications[1], TA = 25°C
Symbol
GP
∆GP
f3 dB
VSWR
NF
P1 dB
IP3
tD
Vd
dV/dT
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units Min.
Power Gain (|S21| 2)
Gain Flatness
f = 0.1 GHz
f = 0.1 to 1.0 GHz
dB
11.5
dB
3 dB Bandwidth[2]
GHz
Input VSWR
f = 0.1 to 1.0 GHz
Output VSWR
f = 0.1 to 1.0 GHz
50 Ω Noise Figure
f = 0.5 GHz
dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm 16.0
Third Order Intercept Point
f = 0.5 GHz
dBm
Group Delay
f = 0.5 GHz
psec
Device Voltage
V
4.5
Device Voltage Temperature Coefficient
mV/°C
Notes:
1. The recommended operating current range for this device is 40 to 75 mA.
Typical performance as a function of current is on the following page.
2. Referenced from 50 MHz gain (GP).
Typ. Max.
12.5 13.5
±0.7 ±1.0
1.6
1.7:1
1.9:1
3.5 4.5
17.5
30.0
160
5.5 6.5
–8.0
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