MMBR911L 查看數據表（PDF） - Inchange Semiconductor
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MMBR911L Datasheet PDF : 5 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR911L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
12
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
hFE
DC Current Gain
IC= 30mA ; VCE= 10V
20
V
2
V
0.05 μA
30
200
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
1.0 pF
fT
Current-Gain—Bandwidth Product
IC= 30mA ; VCE= 10V; f= 1GHz
6.0
GHz
GNF
Gain@ Noise Figure
GNF
Gain@ Noise Figure
NF
Noise Figure
NF
Noise Figure
IC= 10mA ; VCE= 10V; f= 0.5GHz
17
dB
IC= 10mA ; VCE= 10V; f= 1GHz
11
dB
IC= 10mA ; VCE= 10V; f= 0.5GHz
2.0
dB
IC= 10mA ; VCE= 10V; f= 1GHz
2.9
dB
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