DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MMDF3N06HD 查看數據表(PDF) - ON Semiconductor

零件编号
产品描述 (功能)
生产厂家
MMDF3N06HD
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMDF3N06HD Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MMDF3N06HD
Preferred Device
Advance Information
Power MOSFET
3 Amps, 60 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature low RDS(on) and
true logic level performance. Dual MOSFET devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc−dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Source Current − Continuous @ TA = 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VGS
ID
IDM
IS
PD
60
Vdc
± 20 Vdc
3.3
Adc
16.5 Apk
1.7
Adc
2.0 Watts
Operating and Storage Temperature Range TJ, Tstg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 60 Vdc, VGS = 5.0 Vdc,
VDS = 32 Vdc, IL = 15 Apk, L = 10 mH,
RG = 25 )
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJA
TL
105
mJ
62.5 °C/W
260
°C
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
3 AMPERES
60 VOLTS
RDS(on) = 100 mW
N−Channel
D
D
G
G
S
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
D3N06
LYWW
1
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF3N06HDR2 SO−8 2500 Tape & Reel
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MMDF3N06HD/D

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]