MMDF3N06HD 查看數據表（PDF） - ON Semiconductor
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MMDF3N06HD Datasheet PDF : 12 Pages
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MMDF3N06HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0 Vdc)
(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 3.3 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
Forward Transconductance
(VDS = 15 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 3.3 Adc,
VGS = 4.5 Vdc,
RG = 30 Ω)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 30 Vdc, ID = 3.3 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
Typ
Max
Unit
60
−
Vdc
−
µAdc
−
0.001
1.0
−
0.05
25
−
12
100
nAdc
1.0
−
Vdc
−
mW
−
67.5
100
−
82.5
200
Mhos
−
7.5
−
−
442
618
pF
−
97.6
137
−
24.4
34.2
−
10.6
22.1
ns
−
15.9
31.8
−
23.8
47.6
−
14.7
29.4
−
7.0
14
ns
−
4.8
9.6
−
32.4
64.8
−
14.2
28.4
−
14.5
29
nC
−
1.8
−
−
3.5
−
−
3.75
−
Vdc
−
0.78
1.2
−
0.65
−
−
27.9
−
ns
−
23
−
−
4.9
−
−
0.038
−
µC
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