MMDF3N06HD 查看數據表（PDF） - ON Semiconductor
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MMDF3N06HD Datasheet PDF : 12 Pages
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MMDF3N06HD
1200
Ciss
1000
TJ = 25°C
800
Crss
600
Ciss
400
200
Coss
0
−10 −5.0 0
5.0 10
15 20
25 30
VGS
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance Variation
1000
VDD = 30 V
ID = 3.0 A
VGS = 10 V
TJ = 25°C
100
td(off)
10
tf
tr
td(on)
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0 Q1
3.0
2.0
1.0
Q3
0
0 2.0
30
QT
VGS
20
Q2
10
VDS
4.0 6.0 8.0 10
ID = 3.0 A
TJ = 25°C
0
12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
2.5
TJ = 25°C
2.0
VGS = 0 V
1.5
1.0
0.5
1.0
1.0
10
RG, GATE RESISTANCE (OHMS)
0
100
0.5 0.55
0.6
0.65
0.7
0.75
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage
versus Current
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