MMDF3N06HD 查看數據表（PDF） - ON Semiconductor
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MMDF3N06HD Datasheet PDF : 12 Pages
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MMDF3N06HD
100
VGS = 12 V
SINGLE PULSE
TA = 25°C
10
1.0
1.0 ms
10 ms
0.1
RDS(on) LIMIT
dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
120
ID = 3.0 A
100
80
60
40
20
0
25
45
65
85
105
125
145
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
Chip
Junction
0.0106 Ω 0.0431 Ω 0.1643 Ω 0.3507 Ω 0.4302 Ω
0.0253 F 0.1406 F
0.5064 F 2.9468 F
177.14 F
Ambient
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 14. Thermal Response
10
100
1000
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
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