MTB60N06HD 查看數據表（PDF） - ON Semiconductor

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MTB60N06HD

Power MOSFET 60 Amps, 60 Volts

ON Semiconductor 

MTB60N06HD

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

1.0E−05

SINGLE PULSE

1.0E−04

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1.0E−03

1.0E−02

t, TIME (s)

1.0E−01

Figure 14. Thermal Response

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

1.0E+00

1.0E+01

IS

tp

di/dt

trr

ta

tb

0.25 IS

IS

TIME

Figure 15. Diode Reverse Recovery Waveform

3

RθJA = 50°C/W

Board material = 0.065 mil FR−4

2.5

Mounted on the minimum recommended footprint

Collector/Drain Pad Size ≈ 450 mils x 350 mils

2.0

1.5

1

0.5

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (°C)

Figure 16. D2PAK Power Derating Curve

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7

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