MTSF2P02HD 查看數據表（PDF） - ON Semiconductor
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MTSF2P02HD Datasheet PDF : 12 Pages
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MTSF2P02HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 2.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(Cpk ≥ 2.0)
(Notes 2. & 4.)
V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
20
Temperature Coefficient (Positive)
−
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
−
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 4.)
VGS(th)
(VDS = VGS, ID = 250 µAdc)
0.5
Threshold Temperature Coefficient (Negative)
−
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 2.4 Adc)
(VGS = 2.7 Vdc, ID = 1.2 Adc)
(Cpk ≥ 2.0) (Note 4.)
RDS(on)
−
−
Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc)
(Note 2.)
gFS
2.6
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 4.)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDS = 10 Vdc, ID = 2.4 Adc,
tr
−
VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 2.)
td(off)
−
Fall Time
tf
−
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 1.2 Adc,
tr
−
VGS = 2.7 Vdc, RG = 6.0 Ω) (Note 2.)
td(off)
−
Fall Time
tf
−
Gate Charge
QT
−
(VDS = 16 Vdc, ID = 2.4 Adc,
VGS = 4.5 Vdc) (Note 2.)
Q1
−
Q2
−
Q3
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)
VSD
(IS = 2.4 Adc, VGS = 0 Vdc,
−
TJ = 125°C)
−
Reverse Recovery Time
trr
−
(IS = 2.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 2.)
ta
−
tb
−
Reverse Recovery Stored Charge
QRR
−
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
−
12.7
0.015
0.03
0.05
1.1
2.5
70
100
4.4
550
375
150
10
27
75
110
22
110
55
85
12.5
1.5
6.4
5.8
0.85
0.71
179
39
140
0.28
Max
Unit
Vdc
−
−
mV/°C
µAdc
1.0
25
100
nAdc
Vdc
1.4
−
mV/°C
mΩ
90
120
−
Mhos
−
pF
−
−
−
ns
−
−
−
−
−
−
−
18
nC
−
−
−
Vdc
1.0
−
−
ns
−
−
−
µC
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