MTSF2P02HD 查看數據表（PDF） - ON Semiconductor

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MTSF2P02HD

Power MOSFET 2 Amps, 20 Volts P−Channel Micro8

ON Semiconductor 

MTSF2P02HD

di/dt = 300 A/µs

Standard Cell Density

trr

High Cell Density

trr

tb

ta

t, TIME

Figure 13. Reverse Recovery Time (trr)

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curve (Figure

14) defines the maximum simultaneous drain−to−source

voltage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maximum

peak junction temperature and a case temperature (TC) of

25°C. Peak repetitive pulsed power limits are determined by

using the thermal response data in conjunction with the

procedures discussed in AN569, “Transient Thermal

Resistance − General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 µs. In addition the

total power averaged over a complete switching cycle must

not exceed (TJ(MAX) − TC)/(RθJC).

100

VGS = 8 V

SINGLE PULSE

10 TC = 25°C

1 ms 100 µs

10 ms

1

dc

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

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