MTSF3N02HD 查看數據表（PDF） - ON Semiconductor
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MTSF3N02HD Datasheet PDF : 12 Pages
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MTSF3N02HD
Preferred Device
Power MOSFET
3 Amps, 20 Volts
N–Channel Micro8t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package – Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive – Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
8
http://onsemi.com
3 AMPERES
20 VOLTS
RDS(on) = 40 mW
N–Channel
D
G
S
MARKING
DIAGRAM
Micro8
CASE 846A
WW
STYLE 1
AC
1
WW = Date Code
PIN ASSIGNMENT
Source
Source
Source
Gate
18
2
7
3
6
4
5
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MTSF3N02HDR2 Micro8 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 5
Publication Order Number:
MTSF3N02HD/D
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