MTSF3N02HD 查看數據表（PDF） - ON Semiconductor

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MTSF3N02HD

Power MOSFET 3 Amps, 20 Volts N–Channel Micro8

ON Semiconductor 

MTSF3N02HD

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

Gate–to–Source Voltage – Continuous

1″ SQ.

FR–4 or G–10 PCB

Figure 1 below

Steady State

Thermal Resistance – Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current – Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

Minimum

FR–4 or G–10 PCB

Figure 2 below

Steady State

Thermal Resistance – Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current – Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

Operating and Storage Temperature Range

1. Repetitive rating; pulse width limited by maximum junction temperature.

Symbol

VDSS

VDGR

VGS

RTHJA

PD

ID

ID

IDM

RTHJA

PD

ID

ID

IDM

TJ, Tstg

Max

20

20

± 8.0

70

1.79

14.29

6.1

4.9

49

160

0.78

6.25

4.0

3.2

32

– 55 to 150

Unit

V

V

V

°C/W

Watts

mW/°C

A

A

A

°C/W

Watts

mW/°C

A

A

A

°C

Figure 1. 1, Square FR–4 or G–10 PCB

Figure 2. Minimum FR–4 or G–10 PCB

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