MTY16N80E 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MTY16N80E Datasheet PDF : 7 Pages
| |||
MTY16N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 8.0 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 16 Adc)
(VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C)
Forward Transconductance (VDS ≥ 15 Vdc, ID = 8.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 16 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 16 Adc, VGS = 0 Vdc)
(IS = 16 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(See Figure 14)
(IS = 16 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
Typ
Max
Unit
800
—
—
570
Vdc
—
—
mV/°C
μAdc
—
—
10
—
—
100
—
—
100
nAdc
Vdc
2.0
3.0
4.0
—
9.0
—
mV/°C
—
0.42
0.5
Ohm
Vdc
—
7.3
9.4
—
—
8.4
10
15
—
mhos
—
7220 10110
pF
—
508
710
—
65
130
—
52
100
ns
—
112
200
—
122
240
—
100
200
—
146
200
nC
—
39
—
—
48
—
—
53
—
Vdc
—
0.9
1.2
—
0.79
—
—
995
—
ns
—
428
—
—
567
—
—
20
—
μC
nH
—
4.5
—
nH
—
13
—
http://onsemi.com
2
Share Link: 