MTY16N80E 查看數據表（PDF） - ON Semiconductor
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MTY16N80E Datasheet PDF : 7 Pages
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32
TJ = 25°C
24
MTY16N80E
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
6V
8V
16
VDS ≥ 10 V
12
100°C
16
5V
8
4V
0
024
6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
8
25°C
4
TJ = −55°C
0
2
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.9
VGS = 10 V
0.6
TJ = 100°C
25°C
0.3
−55°C
0
0
8
16
24
32
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.6
TJ = 25°C
0.5
VGS = 10 V
15 V
0.4
4
8
12
16
20
24
28 3
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 8 A
2.0
1.5
100000
VGS = 0 V
10000
1000
TJ = 125°C
100°C
1.0
100
25°C
0.5
10
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 100 200 300 400 500 600 700 8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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