MTY25N60E 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MTY25N60E Datasheet PDF : 8 Pages
| |||
MTY25N60E
TYPICAL ELECTRICAL CHARACTERISTICS
50
TJ = 25°C
VGS = 10 V
40
30
6V
8V
5V
20
10
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
50
VDS ≥ 10 V
40
30
20
100°C
TJ = −55°C
10
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.5
VGS = 10 V
0.4
0.3
0.2
0.1
TJ = 100°C
25°C
−55 °C
0.26
TJ = 25°C
0.24
0.22
0.2
VGS = 10 V
15 V
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.18
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2 ID = 12.5 A
1.5
1
0.5
10000
1000
100
VGS = 0 V
10
TJ = 125°C
100°C
25°C
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
100
200
300
400
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
3
Share Link: 