MTY55N20E 查看數據表（PDF） - ON Semiconductor
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MTY55N20E Datasheet PDF : 8 Pages
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MTY55N20E
TYPICAL ELECTRICAL CHARACTERISTICS
120
TJ = 25°C
100
80
60
VGS = 10 V
8V
7V
9V
6V
40
5V
20
4V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
120
VDS ≥ 10 V
100
80
60
40
100°C
TJ = −55°C
20
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
VGS = 10 V
0.04
0.03
0.02
0.01
TJ = 100°C
25°C
−55 °C
0.027
0.026
TJ = 25°C
0.025
0.024
0.023
VGS = 10 V
15 V
0
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.022
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
VGS = 10 V
1.75
ID = 27.5 A
1.5
1.25
10000
VGS = 0 V
1000
TJ = 125°C
100°C
1
100
0.75
0.5
10
25°C
0.25
0
−50 −25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
50
100
150
200
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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