MURS360 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd
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MURS360 Datasheet PDF : 2 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
Features
MURS310 – MURS3100
3.0A SURFACE MOUNT ULTRAFAST DIODE
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop, High Efficiency
D
! Surge Overload Rating to 100A Peak
! Low Power Loss
A
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
J
C
H
G
E
Classification Rating 94V-O
Mechanical Data
! Case: SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.20 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
SMC/DO-214AB
Dim
Min
Max
A
5.59
6.22
B
6.60
7.11
C
2.75
3.25
D
0.152
0.305
E
7.75
8.13
F
2.00
2.62
G
0.051
0.203
H
0.76
1.27
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL =100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 3.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
MURS MURS MURS MURS MURS MURS MURS
310
320
330
340
36 0
38 0
3100
50 100 200 400 600 800 1000
35 70 140 280 420 560 800
3.0
Unit
V
V
A
IFSM
100
A
VFM
IRM
trr
Cj
RJL
Tj, TSTG
1.0
1.3
2.0
500
50
25
30
-55 to +150
1.7
75
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
MURS310 – MURS3100
1 of 2
www.senocn.com
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