KTD1898 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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KTD1898 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTD1898 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z General Purpose Application
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Test conditions
IC=0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=80V,IE=0
VEB=4V,IC=0
VCE=3V, IC=500mA
IC=500mA,IB=20mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA,
f=100MHz
Min Typ Max Unit
100
V
80
V
5
V
1
µA
1
µA
70
400
0.4
V
20
pF
100
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
70–140
ZO
Y
120–240
ZY
GR
200–400
ZG
www.cj-elec.com
1
CD,Nov,2015
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