M34250M2 查看數據表（PDF） - Renesas Electronics

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M34250M2

SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

Renesas Electronics 

MITSUBISHI MICROCOMPUTERS

4250 Group

SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

PERFORMANCE OVERVIEW

Parameter

Function

Number of basic instructions

70

Minimum instruction execution time 1.0 µs (at 4.0 MHz system clock frequency) (Refer to the electrical characteristics because

the minimum instruction execution time depends on the supply voltage.)

Memory sizes ROM M34250M2/ 2048 words ! 9 bits

RAM E2

64 words ! 4 bits

Input/Output D0–D3 I/O

Four independent I/O ports; ports D2 and D3 are also used as ports C and K, respectively.

ports

S0–S3 I/O

4-bit I/O port

C

I/O

1-bit I/O port; port C is also used as port D2.

K

I/O

1-bit I/O port; port K is also used as port D3.

F0, F1 I/O

2-bit I/O port

G0–G3 I/O

4-bit I/O port; ports G0 and G1 are also used as pins INT and TOUT.

INT

Input

Interrupt input; INT pin is also used as port G0.

TOUT Output Timer output; TOUT pin is also used as port G1.

Timer

Timer 1

8-bit timer with a reload register

Interrupt

Sources

2 (one for external and one for timer)

Nesting

1 level

Oscillation circuit

CR oscillation circuit (a capacitor and a resistor connected externally)

Frequency error: ±17 %

(VDD = 5 V ± 10 %, VDD = 3 V ± 10 %, the error of the external capacitor and resistor excluded)

Subroutine nesting

4 levels

Device structure

CMOS silicon gate

Package

20-pin plastic molded SOP (20P2N-A)

Operating temperature range

–20 °C to 85 °C

Supply voltage

2.2 V to 5.5 V (Refer to the electrical characteristics because the supply voltage depends on

the system clock frequency.)

Power

Active mode

1.5 mA

dissipation

(at 4.0 MHz system clock frequency, VDD = 5 V, output transistors in the cut-off state)

(typical value) RAM back-up mode 0.1 µA (at room temperature, VDD = 5 V, output transistors in the cut-off state)

3

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