DTA124EG-AE3-B 查看數據表（PDF） - Unisonic Technologies

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DTA124EG-AE3-B

PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS)

Unisonic Technologies 

DTA124E

PNP EPITAXIAL SILICON TRANSISTOR

 ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

Output Current

VIN

IC

IO

SOT-23/SOT-323

-40 ~ +10

V

-100

-30

mA

200

Power Dissipation

SOT-523

PD

150

mW

TO-92

625

Junction Temperature

Storage Temperature

TJ

+150

°C

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

Input Voltage

Output Voltage

VI(OFF)

VI(ON)

VO(ON)

Input Current

Output Current

II

IO(OFF)

DC Current Gain

GI

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

Note: Transition frequency of the device

TEST CONDITIONS

VCC= -5V, IOUT= -100μA

VOUT= -0.2V, IOUT= -5mA

IOUT/IIN= -10mA / -0.5 mA

VIN= -5V

VCC= -50V , VIN=0V

VOUT= -5V, IOUT= -5mA

VCE= -10 V, IE = 5mA, f=100MHz (Note)

MIN

-3

56

15.4

0.8

TYP

-0.1

22

1

250

MAX UNIT

-0.5

V

-0.3 V

-0.36 mA

-0.5 μA

28.6 kΩ

1.2

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-044.F

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