ATC100B5R6CT500XT 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

ATC100B5R6CT500XT

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 1. Maximum Ratings

Rating

Drain - Source Voltage

Gate - Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

Tstg

TC

TJ

Pin

Symbol

RθJC

Value

- 0.5, +68

- 0.5, +6

- 65 to +150

150

225

20

Value (2,3)

Unit

Vdc

Vdc

°C

°C

°C

dBm

Unit

°C/W

Final Application

Stage 1, 26 Vdc, IDQ1 = 100 mA

4.3

(Pout = 15 W CW)

Stage 2, 26 Vdc, IDQ2 = 170 mA

1.2

Driver Application

Stage 1, 26 Vdc, IDQ1 = 130 mA

4.3

(Pout = 3 W CW)

Stage 2, 26 Vdc, IDQ2 = 170 mA

1.3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1A (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W

PEP, f1 = 1930 MHz, f2 = 1930.1 MHz, Two - Tone CW

Power Gain

Gps

24

26

—

dB

Power Added Efficiency

PAE

26

28

—

%

Intermodulation Distortion

IMD

—

- 30

- 27

dBc

Input Return Loss

IRL

—

—

- 10

dB

Typical Two - Tone Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout =

15 W PEP, 1805 - 1880 MHz, Two - Tone CW, 100 kHz Tone Spacing

Power Gain

Gps

—

26

—

dB

Power Added Efficiency

PAE

—

28

—

%

Intermodulation Distortion

IMD

—

- 30

—

dBc

Input Return Loss

IRL

—

- 10

—

dB

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

(continued)

MW6IC2015NBR1 MW6IC2015GNBR1

2

RF Device Data

Freescale Semiconductor

Share Link: