ATC100B0R1BT500XT 查看數據表（PDF） - NXP Semiconductors.
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ATC100B0R1BT500XT Datasheet PDF : 28 Pages
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TYPICAL CHARACTERISTICS — 1930 - 1990 MHz
40
0
35
−10
PAE
30
−20
Gps
25
−30
IRL
20
−40
IMD
15 VDD = 26 Vdc, Pout = 7.5 W (Avg.)
IDQ1 = 100 mA, IDQ2 = 170 mA
100 kHz Tone Spacing
10
1900
1920
1940
1960
−50
−60
1980
2000
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ Pout = 7.5 Watts Avg.
30
0
Gps
25
−10
20 IRL
−20
15
−30
IMD
10
−40
PAE
5
0
VDD = 26 Vdc, Pout = 1.5 W (Avg.)
IDQ1 = 100 mA, IDQ2 = 170 mA
100 kHz Tone Spacing
1900
1920
1940
1960
1980
−50
−60
2000
f, FREQUENCY (MHz)
Figure 6. Two - Tone Wideband Performance
@ Pout = 1.5 Watts Avg.
31
IDQ1 = 130 mA
30 IDQ2 = 170 mA
29
IDQ1 = 100 mA
28
IDQ2 = 170 mA
27
IDQ1 = 100 mA
IDQ2 = 130 mA
26
IDQ1 = 100 mA
IDQ2 = 210 mA
IDQ1 = 70 mA
IDQ2 = 170 mA
25
VDD = 26 Vdc
24 Center Frequency = 1960 MHz
100 kHz Tone Spacing
23
0.1
1
10
30
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Two - Tone Power Gain versus
Output Power
−10
VDD = 26 Vdc
−20 IDQ1 = 100 mA, IDQ2 = 170 mA
f = 1960 MHz, 100 kHz Tone Spacing
−30
5th Order
−40
3rd Order
−50
7th Order
−60
−70
−80
0.1
1
10
30
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
MW6IC2015NBR1 MW6IC2015GNBR1
6
RF Device Data
Freescale Semiconductor
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