MRFE6VP61K25HR6(2010) 查看數據表（PDF） - Freescale Semiconductor
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MRFE6VP61K25HR6 Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS
2000
1000
Ciss
100
Coss
10
Measured with ±30 mV(rms)ac @ 1 MHz
1 VGS = 0 Vdc
0
10
20
30
Crss
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
66
P3dB = 61.9 dBm (1553 W)
Ideal
65
P2dB = 61.7 dBm (1472 W)
64
63 P1dB = 61.3 dBm
(1333 W)
62
Actual
61
60
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
59
35
36
37
38
39
40
41
42
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
26
90
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
25 Pulse Width = 100 μsec, 20% Duty Cycle
80
24
70
23
60
Gps
22
50
21
ηD
20
100
40
30
1000
2000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
26
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
25 Pulse Width = 100 μsec, 20% Duty Cycle
24
23
22
50 V
21
20
40 V 45 V
19
18
35 V
17
VDD = 30 V
16
0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
90
80
35 V
VDD = 30 V
40 V 45 V 50 V
70
60
50
40
30
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
20
0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus
Output Power
26
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
25 Pulse Width = 100 μsec, 20% Duty Cycle
90
--30_C
25_C
80
24
TC = --30_C
23 25_C
85_C 70
60
22 Gps
50
85_C
21
40
20
ηD
19
100
30
20
1000
2000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
5
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