MRFE6VP61K25HSR5 查看數據表（PDF） - Freescale Semiconductor

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MRFE6VP61K25HSR5

RF Power LDMOS Transistors

Freescale Semiconductor 

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Total Device Dissipation @ TC = 25C

Derate above 25C

Operating Junction Temperature (1,2)

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz

Thermal Impedance, Junction to Case

Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle,

IDQ = 100 mA, 230 MHz

Table 3. ESD Protection Characteristics

Symbol

VDSS

VGS

Tstg

TC

PD

TJ

Value

--0.5, +133

--6.0, +10

-- 65 to +150

150

1333

6.67

225

Symbol

RJC

ZJC

Value (2,3)

0.15

0.03

Unit

Vdc

Vdc

C

C

W

W/C

C

Unit

C/W

C/W

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

2, passes 3500 V

B, passes 250 V

IV, passes 4000 V

Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

Adc

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 mA)

V(BR)DSS

133

—

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IDSS

—

—

20

Adc

On Characteristics

Gate Threshold Voltage (4)

(VDS = 10 Vdc, ID = 1776 Adc)

VGS(th)

1.7

2.2

2.7

Vdc

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage (4)

(VGS = 10 Vdc, ID = 2 Adc)

VGS(Q)

1.9

2.2

2.9

Vdc

VDS(on)

—

0.15

—

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 30 Adc)

gfs

—

28.0

—

S

Dynamic Characteristics (4)

Reverse Transfer Capacitance

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

2.8

—

pF

Output Capacitance

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

185

—

pF

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

562

—

pF

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

4. Each side of device measured separately.

(continued)

MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

RF Device Data

2

Freescale Semiconductor, Inc.

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