MRFE6VP61K25H 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

MRFE6VP61K25H

RF Power LDMOS Transistors

NXP Semiconductors. 

Freescale Semiconductor

Technical Data

Document Number: MRFE6VP61K25H

Rev. 4.1, 3/2014

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

 Typical Performance: VDD = 50 Volts, IDQ = 100 mA

Signal Type

Pout

f

Gps

D

(W)

(MHz)

(dB)

(%)

Pulse

1250 Peak

230

(100 sec, 20% Duty Cycle)

24.0

74.0

CW

1250 CW

230

22.9

74.6

MRFE6VP61K25HR6

MRFE6VP61K25HR5

MRFE6VP61K25HSR5

MRFE6VP61K25GSR5

1.8--600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Application Circuits (1) — Typical Performance

Frequency

Pout

Gps

D

(MHz)

Signal Type

(W)

(dB)

(%)

27

CW

1300

27

81

40

CW

1300

26

85

81.36

CW

1250

27

84

87.5--108

CW

1100

24

80

144--148

CW

1250

26

78

170--230

DVB--T

225

25

30

352

Pulse

1250

21.5

66

(200 sec,

20% Duty Cycle)

352

CW

1150

20.5

68

500

CW

1000

18

58

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

Pout

Test

(W)

Voltage Result

230

Pulse

> 65:1 at all 1500 Peak 50

No Device

(100 sec, 20% Phase Angles (3 dB

Degradation

Duty Cycle)

Overdrive)

Features

 Unmatched Input and Output Allowing Wide Frequency Range Utilization

 Device can be used Single--Ended or in a Push--Pull Configuration

 Qualified Up to a Maximum of 50 VDD Operation

 Characterized from 30 V to 50 V for Extended Power Range

 Suitable for Linear Application with Appropriate Biasing

 Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

NI--1230H--4S

MRFE6VP61K25HR6/R5

NI--1230S--4S

MRFE6VP61K25HSR5

NI--1230GS--4L

MRFE6VP61K25GSR5

Gate A 3

1 Drain A

Gate B 4

2 Drain B

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Figure 1. Pin Connections

 Freescale Semiconductor, Inc., 2010--201M4. RAllFrEigh6tVs rPe6se1rvKe2d.5HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

RF Device Data

Freescale Semiconductor, Inc.

1

Share Link: