MRFE6VP61K25H 查看數據表（PDF） - NXP Semiconductors.
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MRFE6VP61K25H Datasheet PDF : 23 Pages
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TYPICAL CHARACTERISTICS
2000
1000
Ciss
100
Coss
10
Measured with 30 mV(rms)ac @ 1 MHz
1 VGS = 0 Vdc
0
10
20
30
Crss
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
66
P3dB = 61.9 dBm (1553 W)
Ideal
65
P2dB = 61.7 dBm (1472 W)
64
63 P1dB = 61.3 dBm
(1333 W)
62
Actual
61
60
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
59
35
36
37
38
39
40
41
42
Pin, INPUT POWER (dBm) PEAK
Figure 5. Output Power versus Input Power
26
90
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz
25 Pulse Width = 100 sec, 20% Duty Cycle
80
24
70
23
60
Gps
22
50
21
D
20
100
40
30
1000
2000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
26
IDQ = 100 mA, f = 230 MHz
25 Pulse Width = 100 sec, 20% Duty Cycle
24
23
22
50 V
21
20
40 V 45 V
19
18
35 V
17
VDD = 30 V
16
0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain versus Output Power
90
80
35 V
VDD = 30 V
40 V 45 V 50 V
70
60
50
40
30
IDQ = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
20
0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Drain Efficiency versus Output Power
26
90
--30_C
25
25_C
80
24
TC = --30_C
23 25_C
85_C 70
60
22 Gps
50
85_C
21
40
20
D
19
100
VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz 30
Pulse Width = 100 sec, 20% Duty Cycle
20
1000
2000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 9. Power Gain and Drain Efficiency versus
Output Power
MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
6
RF Device Data
Freescale Semiconductor, Inc.
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