MRFE6VP61K25H 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

MRFE6VP61K25H

RF Power LDMOS Transistors

NXP Semiconductors. 

TYPICAL CHARACTERISTICS

109

108

107

106

105

104

90

110 130 150 170

190 210

230 250

TJ, JUNCTION TEMPERATURE (C)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 50 Vdc, Pout = 1250 W CW, and D = 74.6%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 10. MTTF versus Junction Temperature — CW

VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak

f

MHz

Zsource



Zload



230

1.29 + j3.54

2.12 + j2.68

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured from

drain to drain, balanced configuration.

Input

Matching

50 

Network

Device

+ Under

Test

Output

--

Matching

Network

50 

--

Zsource

+

Zload

Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse

RF Device Data

Freescale Semiconductor, Inc.

MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

7

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