MC9S08LL16(2009) 查看數據表（PDF） - Freescale Semiconductor
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MC9S08LL16 Datasheet PDF : 50 Pages
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Electrical Characteristics
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 3-1 and Equation 3-2 iteratively for any value of TA.
3.5 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Series resistance
Human
Body Model Storage capacitance
Number of pulses per pin
Charge
Device
Model
Series resistance
Storage capacitance
Number of pulses per pin
Minimum input voltage limit
Latch-up
Maximum input voltage limit
Symbol
R1
C
—
R1
C
—
Value
1500
100
3
0
200
3
–2.5
7.5
Unit
Ω
pF
Ω
pF
V
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
Symbol
Min
Max Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Charge device model (CDM)
VCDM
±500
—
V
3
Latch-up current at TA = 85°C
ILAT
±100
—
mA
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
MC9S08LL16 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
11
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