VIT5200-E3 查看數據表（PDF） - Vishay Semiconductors

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VIT5200-E3

Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

Breakdown voltage

Instantaneous forward voltage

IR = 1.0 mA

IF = 2.5 A

IF = 5.0 A

IF = 2.5 A

IF = 5.0 A

Reverse current

VR = 180 V

VR = 200 V

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TA = 25 °C

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VBR

VF (1)

IR (2)

200 (min.)

0.81

1.10

0.58

0.65

1.7

1.8

-

2.5

MAX.

-

-

1.60

-

0.73

-

-

150

10

UNIT

V

V

μA

mA

μA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT5200

VFT5200

Typical thermal resistance

RJC

3.5

7.0

VBT5200

3.5

VIT5200

3.5

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AC

VT5200-E3/4W

1.82

ITO-220AC

VFT5200-E3/4W

1.65

TO-263AB

VBT5200-E3/4W

1.36

TO-263AB

VBT5200-E3/8W

1.36

TO-262AA

VIT5200-E3/4W

1.44

PACKAGE CODE

4W

4W

4W

8W

4W

BASE QUANTITY

50/tube

50/tube

50/tube

800/reel

50/tube

DELIVERY MODE

Tube

Tube

Tube

Tape and reel

Tube

Revision: 27-Feb-18

2

Document Number: 89176

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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