OP506A 查看數據表（PDF） - TT Electronics.

零件编号

产品描述 (功能)

生产厂家

OP506A

NPN Silicon Phototransistor

TT Electronics. 

OP505, OP505W, OP506, OP506W

OP535, OP705

Electrical Specifications

Electrical Characteristics ( TA = 25° C unless otherwise noted )

OP535

SYMBOL

PARAMETER

MIN TYP

On-State Collector Current

IC(ON)

OP535A 10.5 -

OP535B 3.5

-

VCE(SAT) Collector-Emitter Saturation Voltage

-

-

ICEO Collector-Dark Current

-

-

V(BR)CEO Collector-Emitter Breakdown Voltage

15.0 -

V(BR)ECO Emitter-Collector Breakdown Voltage

5.0

-

MAX

-

32.0

1.10

100

-

-

UNITS

TEST CONDITIONS

mA VCE = 5 V, EE = 0.13 mW/cm2, Note 3

V

IC = 400 μA, EE = 0.13 mW/cm2 , Note 3

nA VCE = 10 V, EE = 0

V

IC = 1.0 mA, EE = 0

V

IE = 100 μA, EE = 0

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

© TT electronics plc

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Issue B 08/2016 Page 4

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