HMC757LP4E 查看數據表（PDF） - Hittite Microwave

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HMC757LP4E

GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 16 - 24 GHz

Hittite Microwave 

v00.0610

Outline Drawing

HMC757LP4E

GaAs pHEMT MMIC ½ WATT

POWER AMPLIFIER, 16 - 24 GHz

9

Package Information

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER

50 MICROINCHES MINIMUM NICKEL.

3. DIMENSIONS ARE IN INCHES [MILLIMETERS].

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C-

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

Part Number

Package Body Material

Lead Finish

HMC757LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] 4-Digit lot number XXXX

[2] Max peak reflow temperature of 260 °C

MSL Rating

MSL1 [2]

Package Marking [1]

H757

XXXX

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

9-6

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