HMC757LP4E 查看數據表（PDF） - Hittite Microwave
零件编号
产品描述 (功能)
生产厂家
HMC757LP4E Datasheet PDF : 8 Pages
| |||
v00.0610
HMC757LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
9
Pin Descriptions
Pin Number
Function
1, 2, 4 - 7,
12 - 15, 17 - 19, 24
GND
3
RFIN
8 - 11, 20, 22
N/C
16
RFOUT
Description
These pins and package bottom must be
connected to RF/DC ground.
This pin is AC coupled
and matched to 50 Ohms.
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
This pin is AC coupled
and matched to 50 Ohms.
21
Vdd
Drain bias for amplifier. External bypass caps 100pF, 0.1uF
and 4.7uF are required
Gate control for PA. Adjust Vgg to achieve recommended
23
Vgg
bias current. External bypass caps 100pF, 0.1uF and 4.7uF
are required.
Interface Schematic
Application Circuit
9-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Share Link: 