2SB1420 查看數據表（PDF） - Inchange Semiconductor
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2SB1420 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
2SB1420
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -16mA
-1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= -8A; IB= -16mA
VCB= -120V; IE=0
-2.5
V
-10
μA
IEBO
Emitter Cutoff Current
VEB= -6V; IC=0
-10
mA
hFE
DC Current Gain
IC= -8A; VCE= -4V
2000
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
350
pF
fT
Current-Gain—Bandwidth Product IE= 1A; VCE= -12V
50
MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -12A; IB1= -IB2= -24mA,
VCC= -24V, RL= 2Ω
1.0
μs
3.0
μs
1.0
μs
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