BDX34B 查看數據表（PDF） - New Jersey Semiconductor
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BDX34B Datasheet PDF : 2 Pages
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BDX33,A,B,C NPN / BDX34,A,B,C PNP
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining VoHagefl) BDX33, BDX34
VCECXIU*)
45
V
( lc= 1 00 mA, IB" 0 )
BDX33A, BDX34A
60
BDX33B, BDX34B
80
BDX33C, BDX34C
100
Collector Cutoff Current
( V,," 22 V, 1.- 0 )
( VM= 30 V, L= 0 )
( Vel= 40 V, l,= 0 )
( V^ 50 V, L= 0 )
ICEO
BDX33, BDX34
BDX33A, BDX34A
BDX33B, BDX34B
BDX33C, BDX34C
mA
0.5
0.5
0.5
0.5
Collector-Base Cutoff Current
(VCB= Rated VCB, 1^0)
ICBO
uA
200
Emitter-Base Cutoff Current
(VB=5.0V, lc=0)
IEBO
mA
10
ON CHARACTERISTICS (1)
DC Current Gain
( lc= 4.0 A. VCE= 3.0 V )
( lc= 3.0 A, VCE= 3.0 V )
hFE
BDX33/33A/34/34A
750
BDX33B/33C/34B/34C
750
Collector-Emitter Saturation Voltage
( I. =4.0 A. IB = 8.0 mA )
( lc- 3.0 A, IB = 6.0 mA )
BDX33/33A/34/34A
BDX33B/33C/34B/34C
V«,««
V
2.5
2.5
Base-Emitter On Voltage
( lc- 4.0 A, VCE- 3.0 V )
( L= 3.0 A, VCE= 3.0 V )
BDX33/33A/34/34A
BDX33B/33C/34B/34C
VM
V
2.5
2.5
(1) Pulse Test Pulse Width =300 us, Duty Cycle £ 2.0%
FIG-2 SAFE OPERATING AREA
5.0
2.0
1.0
O.S
0.2
0.1
- 0.06
0.02
IB
DC
Bonding Win Un*
Second Bmkdown LJn
BDXMC/34C
20
6.0
10
20
SO
100
VCf , COLLECTOR EMITTER VOLTAGE (VOLTS)
ZOO
There are two limitation on the power handling ability
of a transistor iwrage junction temperature and second
breakdown safe operating area curves indicate Iq-Vct
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to
greater dissipation than curve* indicate.
The data of FIG-2 is base onTJ(PW=150 °C;TC avertable
depending on conditions, second breakdown pulse limits are
valid for duty cycles to 10% provided TJfPKj<150°C ,At high
case temperatures, thermal Imitation will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
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