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ES3GCG 查看數據表(PDF) - Jiangsu Yutai Electronics Co., Ltd

零件编号
产品描述 (功能)
生产厂家
ES3GCG
CHENDA
Jiangsu Yutai Electronics Co., Ltd CHENDA
ES3GCG Datasheet PDF : 3 Pages
1 2 3
ES3ABG THRU ES3JBG
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere
SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated
placement High forward surge current capability
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Glass passivated chip junction
Mechanical Data
Case : JEDEC DO-214AB/SMC Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.002 ounce, 0.055 grams
DO-214AB/SMC
0.126 (3.20)
0.114 (2.90)
0.103(2.62)
0.079(2.06)
0.060(1.52)
0.030(0.76)
0.280(7.11)
0.260(6.60)
0.245(6.22)
0.220(5.59)
0.012(0.305)
0.006(0.152)
0.008(0.203)MAX.
0.320(8.13)
0.305(7.75)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55
ES3ACG ES3BCG ES3CCG ES3DCG ES3ECG ES3GCG ES3JCG
SYMBOLS MDD MDD MDD MDD MDD MDD MDD
ES3AC ES3BC ES3CC ES3DC ES3EC ES3GC ES3JC
VRMM
50
100 150 200 300 400 600
VRMS
35
70 105 140 210 280 420
VDC
50 100 150 200 300 400 600
I(AV)
3.0
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
IFSM
90
UNITS
V
V
V
A
A
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DCblocking voltage
TA=25
TA=125
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
VF
IR
trr
CJ
RJA
Operating junction and storage temperature range TJ,TSTG
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.P.C.B. mounted with 1.0x1.0”(2.54x2.54cm) copper pad areas.
3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
4.The typical data above is for referenceonly.
1
1.25
5.0
100.0
35
40.0
40.0
-55 to +150
1.68
V
μA
ns
pF
℃/W
DN:T19712A0
https://www.microdiode.com
Rev:2019A0
Page :1

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