BFP182R 查看數據表（PDF） - Infineon Technologies

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BFP182R

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFP182R

3

2

4

1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP182R

Marking

Pin Configuration

RGs 1=E 2=C 3=E 4 = B -

-

Package

SOT143R

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 69 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

12

V

20

20

2

35

mA

4

250

mW

150

°C

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

325

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

1

2014-04-07

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