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BFP182W(2001) 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
BFP182W
(Rev.:2001)
NPN Silicon RF Transistor
Infineon Technologies
BFP182W Datasheet PDF : 7 Pages
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BFP182W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 10 mA,
V
CE
= 8 V
V
(BR)CEO
12
-
-V
I
CES
-
- 100 µA
I
CBO
-
- 100 nA
I
EBO
-
-
1 µA
h
FE
50 100 200 -
2
Aug-09-2001
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